Title:
垂直磁化膜の前駆体構造、垂直磁化膜構造、およびその製造方法、これらを用いた垂直磁化型トンネル磁気抵抗接合膜およびその製造方法、ならびにこれらを用いた垂直磁化型トンネル磁気抵抗接合素子
Document Type and Number:
Japanese Patent JP6873506
Kind Code:
B2
Abstract:
The present invention provides a perpendicularly magnetized film structure exhibiting high interface-induced magnetic anisotropy by utilizing a combination of an alloy comprising Fe as a main component and MgAl2O4as a basic configuration. A perpendicularly magnetized film structure (101) according to an embodiment of the present invention includes a substrate (2) that is a single-crystalline substrate having a cubic system structure having a (001) plane or a substrate having a layer having a cubic system structure or tetragonal system structure having a (001) plane; an underlayer (3) that is disposed on the substrate and composed of a conductive material having a good electric conductivity; a perpendicularly magnetized layer (7) that is disposed on the underlayer and includes a layer composed of an iron-based alloy comprising aluminum; and a nonmagnetic layer (6) that is disposed on the perpendicularly magnetized layer, is an oxide having a spinel structure or an oxide having a structure in which a cation site of a spinel structure is disordered, and is grown to have a (001) plane.
Inventors:
Hiroaki Ushikawa
Shake Thomas
Seiji Mitani
Shake Thomas
Seiji Mitani
Application Number:
JP2019540909A
Publication Date:
May 19, 2021
Filing Date:
August 29, 2018
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
H01L43/10; H01F10/14; H01F10/30; H01L21/8239; H01L27/105; H01L43/08; H01L43/12
Domestic Patent References:
| JP2017041606A | ||||
| JP7320933A |
Foreign References:
| US20140110804 |
Other References:
BELMOUBARIK, Mohamed et al.,MgAl2O4(001) based magnetic tunneljunctions made by direct sputtering of a sintered spinel target,APPLIED PHYSICS LETTERS,2016年 3月30日,108,pp. 132404-1-132404-5
Attorney, Agent or Firm:
Shigerou