Title:
相変化材料および相変化型メモリ素子
Document Type and Number:
Japanese Patent JP6598166
Kind Code:
B2
Abstract:
In order to obtain a phase-change material having a novel composition suitable for obtaining a highly practical phase-change type memory element, and a phase-change type memory element using the same, a phase-change material comprises Cr, Ge, and Te as principal components, and has a property such that a resistance value thereof in a crystal phase is greater than a resistance value thereof in an amorphous phase. A phase-change type memory element is provided with: a substrate; a memory layer formed above the substrate from a phase-change material which comprises Cr, Ge, and Te as principal components and of which a resistance value in a crystal phase is greater than a resistance value in an amorphous phase; and first and second electrode layers for supplying electricity to the memory layer.
Inventors:
Yuji Sudo
Hatayama Shogo
Shindo Reishi
Junichi Koike
Yuta Saito
Hatayama Shogo
Shindo Reishi
Junichi Koike
Yuta Saito
Application Number:
JP2017556030A
Publication Date:
October 30, 2019
Filing Date:
December 09, 2016
Export Citation:
Assignee:
Tohoku University
International Classes:
H01L21/8239; H01L27/105; H01L45/00
Domestic Patent References:
| JP2006099927A | ||||
| JP2002512439A | ||||
| JP5303770A |
Other References:
畑山祥吾 他3名,Cr-Ge-Te薄膜の相変化挙動,第76回応用物理学会秋季学術講演会講演予稿集,日本,公益財団法人応用物理学会,2015年 9月13日,14a-PB7-3
畑山祥吾 他4名,Cr-Ge-Te化合物薄膜の相変化挙動,第63回応用物理学会春季学術講演会講演予稿集,日本,公益財団法人応用物理学会,2016年 3月19日,22a-W331-9
SHUANG, Yi et al.,N doping effect in Cr2Ge2Te6 phase change material,日本金属学会講演概要集,日本,公益財団法人日本金属学会,2016年 9月21日,P205
畑山祥吾 他4名,Cr-Ge-Te化合物薄膜の相変化挙動,第63回応用物理学会春季学術講演会講演予稿集,日本,公益財団法人応用物理学会,2016年 3月19日,22a-W331-9
SHUANG, Yi et al.,N doping effect in Cr2Ge2Te6 phase change material,日本金属学会講演概要集,日本,公益財団法人日本金属学会,2016年 9月21日,P205
Attorney, Agent or Firm:
Atsushi Aoki
Shinji Mitsuhashi
Tomohiro Minamiyama
Koichi Itsubo
Endo Riki
Shinji Mitsuhashi
Tomohiro Minamiyama
Koichi Itsubo
Endo Riki