PHASE-CHANGE MEMORY DEVICE AND METHOD FOR UNIFORMLY MAINTAINING RESISTANCE RANGE OF PHASE-CHANGE MATERIAL IN RESET STATE

Japanese Patent JP2005100617

A

To provide a PRAM device and a method for uniformly maintaining the resistance range of phase-change material in a reset state.

The method for uniformly maintaining the resistance range of the phase-change material in the reset state includes: the step of providing data to a PRAM cell; the step of determining whether data stored in the PRAM cell and the data provided to the PRAM cell are identical or not; the step of supplying, when the stored data and the provided data are not identical, a complementary write current having a predetermined size to the PRAM cell, and determining whether the stored data and the provided data are identical or not; and the step of providing data to a next PRAM cell when the stored data and the provided data are identical. The data provided to the PRAM cell is reset data. Thus, there is an advantage that the memory cell is capable of having a uniform resistance range in a reset state even when the size of a contact area between the phase-change material and a lower contact varies from PRAM cell to cell.

CHOI BYUNG-GIL
CHO WOO-YEONG
OH HYUNG-ROK
CHO HAKUKO

JP2004279998A

April 14, 2005

September 27, 2004

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SAMSUNG ELECTRONICS CO LTD

G11C13/00; G11C13/02; G11C16/02; G11C16/34; H01L27/105; H01L45/00; (IPC1-7): G11C13/00; H01L27/10; H01L45/00

JP2005050424A	2005-02-24
JPH1117540A	1999-01-22

Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura

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