To provide a phase-change recording material used for a rewritable information recording medium on which recording/erasing is performed at a high speed and to provide the rewritable information recording medium using the phase-change recording material.

The phase-change recording material used for the information recording medium utilizes a crystalline state as a non-recorded state and an amorphous state as a recorded state and is based on a predetermined SbSnGeTeM1 composition (M1 is In or the like).