Title:
DEVICE FOR LIQUID-PHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JP3214069
Kind Code:
B2
Abstract:
PURPOSE: To provide a device for liquid-phase epitaxial growth capable of producing a high-quality single crystal film in high recovery ratio without applying unnatural stress to substrate bases.
CONSTITUTION: A substrate fixture is equipped with a fitting frame 10 fixed to the lower end part of a holding bar, a retaining frame 15 which is detachably attached to the fitting frame and supports the bottom and the outer peripheral face of substrate bases and spacers 18 which are kept in the interior of the retaining frame and arranged between the substrate bases. The fitting frame, the retaining frame and the spacers are made of a heat-resistant noble metal such as platinum. Plural sheets of the substrate bases are horizontally supported while maintaining intervals by the spacers.
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Inventors:
Mitsuhiro Aota
Yuu Fujino
Tsunobu Mizuno
Masato Kumatoriya
Yutoku Sekishima
Hiroshi Takagi
Yuu Fujino
Tsunobu Mizuno
Masato Kumatoriya
Yutoku Sekishima
Hiroshi Takagi
Application Number:
JP17007692A
Publication Date:
October 02, 2001
Filing Date:
June 03, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
C30B19/06; C30B29/28; G02F1/09; H01L21/208; (IPC1-7): C30B19/06
Domestic Patent References:
| JP63122110A | ||||
| JP4918464U |
Attorney, Agent or Firm:
Hidetaka Tsutsui