To improve dimensional difference between line width L1 of a resist pattern formed as depending on exposure light transmitting through an engraved groove as a phase shifter, and line width L2 of a resist pattern formed depending on the exposure light transmitting through other transparent region, without inducing collapse or peeling of the light shielding pattern.

The mask comprises: a transparent substrate 1 having two regions transmitting exposure light and having a recessed portion which inverts the phase of the exposure light transmitting one region, the recessed portion formed in the other region; and a light shielding film 2 blocking the exposure light, the film formed in such a manner that the film has a plurality of film thicknesses and that the end of the film does not cover the recessed part.