PURPOSE: To easily obtain a high-precision resist pattern suitable for IC manufacture through photo-lithography by immersing a resist film in o-dichlorobenzene or m-dichlorobenzene immediately before or after exposure.
CONSTITUTION: A positive type resist is formed on a substrate 1 by spinner coating, and prebaked. It is immersed into o- or m-dichlorobenzene at 30°C for ≥5 min or at 40°C≤1min immediately before or after exposure, and then, developed. The section of the resist film 2 thus developed is reversely tapered, and the protruding length A at the top is ≤300nm, no visor occurs, and a pattern having no irregular ruggedness on the edges is obtained. A metal is vapor deposited by using this resist pattern as a mask, and then, the resist film 2 and the metal just on it are removed to obtain an IC circuit high in precision.
| WO/1982/001085 | BILAYER PHOTOSENSITIVE IMAGING ARTICLE |
| WO/1987/003706 | IMPROVEMENTS IN OR RELATING TO RADIATION SENSITIVE DEVICES |
NAKAGAWA ATSUSHI
HIROSE TAKASHI
YAMASHITA ICHIROU
