Title:
PHOTO-OR RADIATION-SENSITIVE COMPOSITION, PATTERN FORMING METHOD, PRODUCTION OF PHOTOMASK, AND PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3225537
Kind Code:
B2
Abstract:
PURPOSE: To provide a photo-or radiation-sensitive compsn. having enough sensitivity for light and suitable for lithography using short wavelength light such as far UV ray.
CONSTITUTION: The polymer or oligomer as the main component has a siloxane structure (-Si-O-) as the skeleton of the chemical compsn. This polymer has an end group or side chain group which polymerizes by condensation with an anion or cation seed produced by light or radiation. Thereby, this photo-or radiation-sensitive compsn. becomes insoluble with a solvent after irradiation of light or radiation. In this process, not only an org. solvent is used as a developer but it can be developed with an alkali aq. soln. by providing polarity to the end group. The light or irradiation means visible light, UV ray, far UV ray, vacuum UV ray, X ray, γ ray, electron beam, ion beam, etc.
Inventors:
Hisashi Watanabe
Application Number:
JP12777691A
Publication Date:
November 05, 2001
Filing Date:
May 30, 1991
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G03F1/26; G03F1/68; G03F7/004; G03F7/029; G03F7/038; G03F7/075; H01L21/027; (IPC1-7): G03F7/075; G03F1/08; G03F7/004; G03F7/029; G03F7/038; H01L21/027
Domestic Patent References:
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| JP5688139A | ||||
| JP2110464A | ||||
| JP6368832A | ||||
| JP2173647A | ||||
| JP578248A | ||||
| JP6080844A | ||||
| JP61144639A | ||||
| JP6459289A | ||||
| JP59147001A | ||||
| JP4184445A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)
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