Title:
PHOTO SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05299691
Kind Code:
A
Abstract:
PURPOSE:To improve light emission rate of an element by interposing a multilayer semiconductor layer which is formed by performing lamination to change an effective forbidden band width step by step between a forbidden band width of a clad layer and a forbidden band width of an active layer. CONSTITUTION:An N-type InP clad layer 2, a multilayer semiconductor layer 3 which is formed of a plurality of nondoped InGaAsP crystal films and is formed to change a forbidden band width step by step, an InGaAsP active layer 4 and a P-type InGaAsP cap layer 6 are formed one by one on a surface of an N-type InP substrate 1 by epitaxial growth. Lamination is performed to change an effective forbidden band width step by step between a forbidden band width of the N-type InP clad layer 2 and a forbidden band width of the P-type InGaAsP active layer 4 and the multilayer semiconductor layer 3 is formed. Thereby, it is possible to prevent formation of a P-N junction inside a clad layer, to improve containment of carrier into the active layer and to improve light emission efficiency.
Inventors:
SUGA KAZUHIKO
IKEDA EIJI
IKEDA EIJI
Application Number:
JP12419492A
Publication Date:
November 12, 1993
Filing Date:
April 17, 1992
Export Citation:
Assignee:
JAPAN ENERGY CORP
International Classes:
H01L33/06; H01L33/14; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)