Title:
PHOTO-VOLTAIC DEVICE
Document Type and Number:
Japanese Patent JP3229705
Kind Code:
B2
Abstract:
PURPOSE: To suppress the reduction in the transmittance of light due to a conductive metal oxide film even being exposed to the deoxidizing atmosphere by a method wherein the concentration of the first oxygen in the region adjacent to a semiconductor layer is made higher than that of the second oxygen in the other region, in the direction of the thickness of the conductive metal oxide layer present between the substrate and the semiconductor layer.
CONSTITUTION: In the photo-voltaic device 10, a highly reflective metal electrode 14, a conductive metal oxide film 16, an amorphous semiconductor layer 18, and a light-incident side transparent electrode 20 are successively laminated on an insulative plastic substrate 12. And, the density of the oxygen in the second region 16b adjacent to a semiconductor layer 18 is made higher than the density of the second oxygen in the other first region 16a, in the directio of the thickness of the conductive metal oxide layer 16. Thus, the resistance against the deoxidizing atmosphere at the time of forming an amorphous semiconductor layer 18 is made strong, thereby making it possible to suppress the reduction in the light transmittance in the conductive metal oxide film 16.
Inventors:
Keiichi Sano
Yoichiro Aya
Yoichiro Aya
Application Number:
JP10387493A
Publication Date:
November 19, 2001
Filing Date:
April 30, 1993
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
| JP513790A | ||||
| JP1205474A | ||||
| JP5880877A | ||||
| JP59119875A |
Attorney, Agent or Firm:
Yoshito Yamada