Title:
ホウ素層を有するシリコン基板を含むフォトカソード
Document Type and Number:
Japanese Patent JP6595074
Kind Code:
B2
Abstract:
A photocathode is formed on a monocrystalline silicon substrate having opposing illuminated (top) and output (bottom) surfaces. To prevent oxidation of the silicon, a thin (e.g., 1-5 nm) boron layer is disposed directly on the output surface using a process that minimizes oxidation and defects. An optional second boron layer is formed on the illuminated (top) surface, and an optional anti-reflective material layer is formed on the second boron layer to enhance entry of photons into the silicon substrate. An optional external potential is generated between the opposing illuminated (top) and output (bottom) surfaces. The photocathode forms part of novel electron-bombarded charge-coupled device (EBCCD) sensors and inspection systems.
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Inventors:
Chuwan Yuin-Ho Alex
Fielden John
Fielden John
Application Number:
JP2018220050A
Publication Date:
October 23, 2019
Filing Date:
November 26, 2018
Export Citation:
Assignee:
KLA Corporation
International Classes:
H01J1/34; H01J40/06
Domestic Patent References:
| JP60180052A | ||||
| JP512989A | ||||
| JP200011856A | ||||
| JP2000149767A | ||||
| JP2011145292A | ||||
| JP2015507321A |
Foreign References:
| US4099198 | ||||
| US20040021061 |
Other References:
Agata Sakic et al.,Boron-layer silicon photodiodes for high-efficiency low-energy electron detection,Solid-State Electronics,2011年11月,vol.65-66,pp.38-44
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office