Title:
光電陰極
Document Type and Number:
Japanese Patent JP4939033
Kind Code:
B2
Abstract:
A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.
Inventors:
Kazutoshi Nakajima
Minoru Arakaki
Tomoko Mochizuki
Toru Hirohata
Minoru Arakaki
Tomoko Mochizuki
Toru Hirohata
Application Number:
JP2005316908A
Publication Date:
May 23, 2012
Filing Date:
October 31, 2005
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J1/34; H01J29/38; H01J40/06; H01L31/0248
Domestic Patent References:
| JP11297191A | ||||
| JP8096705A | ||||
| JP8236015A | ||||
| JP8255580A | ||||
| JP9199075A | ||||
| JP4324227A | ||||
| JP2005293948A | ||||
| JP2004264613A | ||||
| JP7161287A | ||||
| JP5266857A | ||||
| JP4269419A | ||||
| JP2004165054A | ||||
| JP2004158301A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
Shiro Terasaki
Satoru Ishida