PURPOSE: To reduce drop of acceptance potential due to exposure immediately before electrostatic charging without peeling of a film by laminating a charge injection preventive layer made of an amorphous silicon carbide on a conductive substrate, and on this layer a photoconductive layer made of an amorphous silicon.

CONSTITUTION: The photoconductive material 1 is composed of the conductive substrate 2, the charge injection preventive layer 3 made of an amorphous silicon carbide contg. an element of group IIIa or Va of the periodic table in an amt. of 1×10-4W1.0 atomic % formed on the substrate 2, the first photoconductive layer 4 made of an amorphous silicon contg. said element in an amt. of 1×10-4 atomic % formed on the layer 3, the second photoconductive layer 5 made of amorphous silicon carbide contg. said element in an amt. of 1×10-8 1×10-4 atomic % formed on the layer 4, and a surface coat layer 6 made of an amorphous silicon carbide, silicon nitride, or silicon oxide formed on the layer 5 for enhancing chemical stability.