PURPOSE: To provide a photoconductive member having high photosensitivity in the whole visible light region, superior matchability with semiconductor laser and a high optical response speed by forming a photoconductive layer of amorphous Si contg. oxygen so that the concn. is stepwise changed in the thickness direction.
CONSTITUTION: A photoconductive member 100 has the 1st layer 102 and the 2nd layer 103 on the support 101, and the layer 102 has a laminated structure formed by successively laminating a layered region 104 made of a-Si(H,X) contg. Ge atoms and a photoconductive layered region 105 made of a-Si(H,X) on the support 101. A layered region contg. O atoms is formed in the layer 102 so as to increases the photosensitivity and dark resistance and to improve the adhesive strength between the support 101 and the layer 102. The region contg. O atoms consists of the 1st layered region 107 in which the concn. of O atoms in the thickness direction is C (1), the 2nd layered region in which the concn. is C (2) and the 3rd layered region in which the concn. is C (3). When one of the regions 107, 108, 109 contains no O atoms, other two regions are required to contain O atoms in different concns. in the thickness direction.
OONUKI YUKIHIKO
OONO SHIGERU
JPS5833257A | 1983-02-26 | |||
JPS5833256A | 1983-02-26 | |||
JPS58137841A | 1983-08-16 | |||
JPS58115448A | 1983-07-09 | |||
JPS57115552A | 1982-07-19 | |||
JPS5888753A | 1983-05-26 | |||
JPS5723544B2 | 1982-05-19 | |||
JPS58115442A | 1983-07-09 | |||
JPS5614241A | 1981-02-12 |
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