Title:
PHOTOCONDUCTOR ELEMENT CONTAINING POLYCRYSTALLINE GALLIUM ARSENIDE THIN FILM, AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011119642
Kind Code:
A
Abstract:
To provide a photoconductive switching antenna material in use for generation and detection of terahertz waves.
The photoconductor element includes a photoconductor substrate, a photoconductor thin film laminated on the photoconductor substrate, and a photoconductive antenna electrode formed on the photoconductor thin film, which contains polycrystalline GaAs.
Inventors:
PAEK MUN CHEOL
Application Number:
JP2010139599A
Publication Date:
June 16, 2011
Filing Date:
June 18, 2010
Export Citation:
Assignee:
KOREA ELECTRONICS TELECOMM
International Classes:
H01S1/02; H01L31/02
Domestic Patent References:
| JP2007281419A | 2007-10-25 | |||
| JPH10104171A | 1998-04-24 | |||
| JPH07508097A | 1995-09-07 | |||
| JP2009210422A | 2009-09-17 |
Foreign References:
| KR20090056764A | 2009-06-03 |
Other References:
JPN6012053644; Ｓｅ Ｙｏｕｎｇ Ｊｅｏｎｇ ｅｔ ａｌ．: 'Ｅｆｆｅｃｔｓ ｏｆ ｍｉｃｒｏｓｔｒｕｃｔｕｒｅ ｏｆ ｌｏｗ ｔｅｍｐｅｒａｔｕｒｅ ｇｒｏｗｎ ＧａＡｓ ｆｉｌｍｓ ｏｎ ｔｈｅ ｐｒｏｐｅｒｔｉｅｓ ｏｆ ｔｅｒａｈｅｒｔｚ ｗａｖｅ ｄｅ' ３４ｔｈ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｃｏｎｆｅｒｅｎｃｅ ｏｎ Ｉｎｆｒａｒｅｄ， Ｍｉｌｌｉｍｅｔｅｒ， ａｎｄ Ｔｅｒａｈｅｒｔｚ Ｗａｖｅｓ （ＩＲＭＭＷ-ＴＨｚ） , 200909
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Masakazu Ito