Title:
PHOTODETECTOR AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3008571
Kind Code:
B2
Abstract:
PURPOSE: To provide a photodetector having high-speed responsibility and less parasitic capacitance at its n-type electrode by forming a PIN-type photodiode in a recess of an insulating substrate and leading out its n-type electrode above the substrate.
CONSTITUTION: A semiconductor layer for a PIN type photodiode is formed in a recess 10a formed in an insulating InP substrate 10. The PIN photodiode has a multilayer structure including an n-InP layer 11 and an i-GaInAs layer 12 to be a photodetector layer. On the layer 12, Zn-diffused n-type regions is provided to form a p-n junction. An insulating layer 14 is deposited over the substrate 10. An electrode 15 for leading out the n-type electrode is provided at one edge of the n-InP layer 11. On the top of the i-GaInAs layer 12 a p-type electrode 16 to which a lead electrode 18 are attached is provided. A PIN photodiode having such a structure has less parasitic capacitance at the n-type electrode compared with the conventional device.
Inventors:
Hiroshi Yano
Application Number:
JP18788491A
Publication Date:
February 14, 2000
Filing Date:
July 26, 1991
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/60; H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP6461944A | ||||
| JP63237466A | ||||
| JP2246156A | ||||
| JP6265851U | ||||
| JP1146562U |
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)