Title:
光検出装置および光検出システム
Document Type and Number:
Japanese Patent JP6921508
Kind Code:
B2
Abstract:
A photodetection device includes a semiconductor substrate; and a pixel including a first semiconductor region having signal charges as majority carriers, and an electrode disposed on the semiconductor substrate with a dielectric member interposed therebetween. The pixel is configured to detect a signal based on avalanche-amplified electric charges. A quenching circuit configured to suppress a current generated by the avalanche amplification is connected to the first semiconductor region. A second semiconductor region of a conductive type opposite that of the first semiconductor region is disposed under the electrode and in a front surface of the semiconductor substrate. When a predetermined potential is supplied to the electrode, an inversion layer is formed in the second semiconductor region, and the inversion layer is electrically connected to the first semiconductor region.
Inventors:
Kazuhiro Morimoto
Ichi Ikeda
Iwata Shunshi
Ichi Ikeda
Iwata Shunshi
Application Number:
JP2016231768A
Publication Date:
August 18, 2021
Filing Date:
November 29, 2016
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L31/107; G01S7/4863; G01S7/4865; G01S17/10; G01S17/931; H01L27/146; H01L31/02; H04N5/369
Domestic Patent References:
| JP3062977A | ||||
| JP2016197730A | ||||
| JP2009535821A | ||||
| JP2009020109A | ||||
| JP2015084392A |
Foreign References:
| US20100148040 |
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa