Title:
PHOTODIODE AND INTEGRATED PHOTORECEIVER
Document Type and Number:
Japanese Patent JP2005086063
Kind Code:
A
Abstract:
To decrease parasitic capacitance while preventing photosensitivity from reduction in a photodiode and in an integrated photoreceiver.
In a semiconductor region 2 of one conductivity type, a region 3 of the other conductivity type is formed, and the main part of the region 3 is formed into a plurality of stripes arranged in parallel to one another. The distance between two neighboring stripes is not less than twice the width of the stripe.
Inventors:
MATSUMOTO YOSHINOBU
TAKEMOTO YUKIHIRO
KUWABARA HIROSHI
TAKEMOTO YUKIHIRO
KUWABARA HIROSHI
Application Number:
JP2003317992A
Publication Date:
March 31, 2005
Filing Date:
September 10, 2003
Export Citation:
Assignee:
KEIO GIJUKU
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Manabe Kiyoshi
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
Shoji Kashiwaya
Koichi Watanabe
Toshiro Ito
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