Title:
PHOTODIODE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH04208577
Kind Code:
A
Abstract:
PURPOSE:To improve photodetecting sensitivity without loss of high frequency response by incorporating a plurality of reverse conductivity type anode regions formed insularly on the upper layer of a common cathode region of a semiconductor substrate except a photodetector, and a common anode electrode connected to the regions through contact layers and formed insularly. CONSTITUTION:Anode regions 1 are so patterned on the upper layer of an n<-> type common cathode region 7 as to be insularly disposed, boron of p-type impurity is implanted and oxidized. Then, an n<+> type region 6 of the outer periphery of a chip is patterned, phosphorus of n-type impurity is diffused, oxidized by a thermal oxidation method, and the region 6 is also formed on a rear surface at this time. Thereafter, after an insulating layer 5 is formed on the surface of the chip, openings for a plurality of anode contacts 4 are provided at the layer 5, the surface of the substrate is exposed, an aluminum layer is deposited on the surface, first, second anode islands 21, 22 are patterned except a photodetector 2, and a common anode electrode 3 is formed. Thus, a photodiode having high light detecting sensitivity and excellent high frequency response is obtained.
Inventors:
YAMANAKA KAZUO
Application Number:
JP34092090A
Publication Date:
July 30, 1992
Filing Date:
November 30, 1990
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)