To provide a photoelectric cathode whose productivity is improved together with the detection sensitivity of an electron tube using the cathode.

This photoelectric cathode comprises an UV glass substrate 3 and a layered body 10 produce by successively forming a SiO2 layer 15, a GaAlN layer 17a, a group III-V nitride-based semiconductor layer 18, and an AlN buffer layer 17 on the UV glass substrate 3. Since the UV glass substrate 3 absorbs infrared rays, heat treatment can be carried out at high speed by the optical heating and UV rays are transmitted through the substrate 3, so that the UV rays can be introduced into the group III-V nitride-based semiconductor layer 18 which carries out photoelectric transfer.