To provide a photoelectric conversion device with high conversion efficiency, high performance and high reliability capable of efficiently arranging and joining many crystalline semiconductor particles on a conductive substrate.

The photoelectric conversion device has second electric-conductive (p-type) crystalline silicon particles 12 with a first electric-conductive (n-type) semiconductor layer 13 formed on the surface of one principal surface of a conductive substrate 11, and arranged at the interval of many particle pieces. The lower part of the crystalline silicon particles 12 is joined to the conductive substrate 11, and insulators 15 are interposed between adjoining particles. The upper parts are arranged as exposed from the insulators 15. A light transparent conductive layer 16 is formed on these crystalline silicon particles 12. Many concave portions are formed in one principal surface of the conductive substrate 11, and at the same time the crystalline silicon particles 12 are arranged in the concave portion.