Title:
PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2021163899
Kind Code:
A
Abstract:
To suppress the degradation of pixel performance in a photoelectric conversion device with a back-side trench structure.SOLUTION: The photoelectric conversion device includes a semiconductor substrate having a trench portion on the side of a photo-receiving surface, a first metal oxide film provided on the photo-receiving surface of the semiconductor substrate, and a second metal oxide film that is provided on the side of the trench portion and is thicker than the first metal oxide film. The photoelectric conversion device has a wiring layer on the opposite side of the photo-receiving surface of the semiconductor substrate.SELECTED DRAWING: Figure 1
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Inventors:
KAMIHIRA TERUMASA
Application Number:
JP2020065792A
Publication Date:
October 11, 2021
Filing Date:
April 01, 2020
Export Citation:
Assignee:
CANON KK
International Classes:
H01L27/146
Domestic Patent References:
| JP2017191950A | 2017-10-19 | |||
| JP2020043265A | 2020-03-19 | |||
| JP2016100347A | 2016-05-30 | |||
| JP2016171253A | 2016-09-23 | |||
| JP2013033864A | 2013-02-14 | |||
| JP2019046974A | 2019-03-22 | |||
| JP2016032001A | 2016-03-07 | |||
| JP2019140251A | 2019-08-22 |
Foreign References:
| US20160276394A1 | 2016-09-22 | |||
| US20190148434A1 | 2019-05-16 | |||
| US20170271383A1 | 2017-09-21 | |||
| WO2014050694A1 | 2014-04-03 |
Attorney, Agent or Firm:
Hidewa Patent Office