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Title:
PHOTOELECTRIC CONVERSION DEVICE, AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2011114310
Kind Code:
A
Abstract:

To provide a photoelectric conversion device having high performance, and to provide a method of manufacturing the same.

The photoelectric conversion device includes a thin film transistor 101 formed on a substrate 1 and a photodiode 100 electrically connected with the thin film transistor 101, wherein the photodiode 100 includes a lower electrode 10 connected with a drain electrode 7 of the thin film transistor 101, a photoelectric conversion layer 11 formed on the lower electrode 10, an upper electrode 12 formed on the photoelectric conversion layer 11 with a transparent conductive film and also formed so as to be included in an upper surface of the photoelectric conversion layer 11 when viewed from above, and a protection film (a compound layer 20 etc.) provided so as to protect the upper surface of the photoelectric conversion layer 11 in the portion outside the upper electrode 12.


Inventors:
Hayashi, Masami
Application Number:
JP2009000271958
Publication Date:
June 09, 2011
Filing Date:
November 30, 2009
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/146; G01J1/02; H01J40/06; H01L27/14; H01L31/10; H04N5/335
Domestic Patent References:
JP2009267326A2009-11-12
JPS63275167A1988-11-11
JP2008251610A2008-10-16
Attorney, Agent or Firm:
家入 健
岩瀬 康弘
須藤 雄一郎