To provide a photoelectric conversion device having high performance, and to provide a method of manufacturing the same.
The photoelectric conversion device includes a thin film transistor 101 formed on a substrate 1 and a photodiode 100 electrically connected with the thin film transistor 101, wherein the photodiode 100 includes a lower electrode 10 connected with a drain electrode 7 of the thin film transistor 101, a photoelectric conversion layer 11 formed on the lower electrode 10, an upper electrode 12 formed on the photoelectric conversion layer 11 with a transparent conductive film and also formed so as to be included in an upper surface of the photoelectric conversion layer 11 when viewed from above, and a protection film (a compound layer 20 etc.) provided so as to protect the upper surface of the photoelectric conversion layer 11 in the portion outside the upper electrode 12.
| WO/2022/165913 | ARRAY SUBSTRATE AND DISPLAY PANEL |
| JPH03156970 | SEMICONDUCTOR DEVICE |
| JP2006269598 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF |
| JP2009267326A | 2009-11-12 | |||
| JPS63275167A | 1988-11-11 | |||
| JP2008251610A | 2008-10-16 |
Yasuhiro Iwase
Yuichiro Sudo