To improve the photoelectric conversion efficiency of a photoelectric conversion device.

A photoelectric conversion device 11 includes, on a substrate 1, a sequential stack of a lower electrode layer 2, a first semiconductor layer 3, a second semiconductor layer 4 having a different conductivity type from that of the first semiconductor layer 3, a high resistance layer 6, and an upper electrode layer 5. The high resistance layer 6 includes a sequential stack of a first layer 6a having a higher electrical resistivity than that of the upper electrode layer 5, a second layer 6b having a lower electrical resistivity than that of the first layer 6a, and a third layer 6c having a higher electrical resistivity than those of the second layer 6b and the upper electrode layer 5, from the second semiconductor layer 4 side.