Title:
PHOTOELECTRIC CONVERSION DEVICE
Document Type and Number:
Japanese Patent JP2023045837
Kind Code:
A
Abstract:
To resolve a problem that a breakdown voltage changes with time due to increase of hot carriers trapped in the vicinity of a cathode region with time.SOLUTION: In a photoelectric conversion device that has an avalanche diode arranged on a semiconductor layer having a first surface and a second surface opposed to the first surface, the avalanche diode has: a first semiconductor region of a first conductivity type arranged at a first depth; and a second semiconductor region of a second conductivity type arranged at a second depth deeper than the first depth to the second surface. On the second surface of the semiconductor layer, an oxide film and a protection film laminated on the oxide film are arranged. When thicknesses and relative dielectric constants of the oxide film and the protection film are defined as dsio, dprot, εsio, and εprot, respectively, there is a position where dsio>(εsio/εprot)×dprot/2 is satisfied.SELECTED DRAWING: Figure 6
Inventors:
MORIMOTO KAZUHIRO
IWATA JUNJI
KANO TAIKAN
IWATA JUNJI
KANO TAIKAN
Application Number:
JP2021154431A
Publication Date:
April 03, 2023
Filing Date:
September 22, 2021
Export Citation:
Assignee:
CANON KK
International Classes:
H01L27/146; H01L31/107
Domestic Patent References:
| JP2005259804A | 2005-09-22 | |||
| JP2021111692A | 2021-08-02 | |||
| JP2019033136A | 2019-02-28 | |||
| JP2020161716A | 2020-10-01 | |||
| JP2021009581A | 2021-01-28 | |||
| JP2007035958A | 2007-02-08 | |||
| JP2003158291A | 2003-05-30 |
Foreign References:
| US20200020734A1 | 2020-01-16 | |||
| US20090273008A1 | 2009-11-05 | |||
| WO2018174090A1 | 2018-09-27 | |||
| US20110278690A1 | 2011-11-17 |
Attorney, Agent or Firm:
Takuma Abe
Sougo Kuroiwa
Sougo Kuroiwa