PURPOSE: To prevent the flowing of currents between adjacent electrodes, and to operate the titled photoelectric conversion device under an excellent state by forming an auxiliary electrode between split electrodes and interposing an insulating layer between a semiconductor thin-film and the auxiliary electrode.

CONSTITUTION: A chromium thin-film C is applied onto a glass substrate 11. The chromium thin-film in an unnecessary section is removed through photolithoetching, and a metallic electrode 12 and auxiliary electrodes 13 are patterned simultaneously. An silicon dioxide film is applied through a sputtering method, the silicon dioxide film in an unnecessary section is removed through photolithoetching, and insulating layers 16 are formed to a shape that the auxiliary electrodes 13 are coated. An amorphous hydrogenated silicon film as a photoconductor layer 15 is deposited through a plasma CVD method. Lastly, an indium oxide tin layer as a light-transmitting electrode 14 is formed through the sputtering method, thus shaping an aimed device.