Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
PHOTOELECTRIC CONVERSION ELEMENT AND ITS MANUFACTURING METHOD, ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD, AND SEMICONDUCTOR LAYER AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2004234988
Kind Code:
A
Abstract:

To provide a photoelectric conversion element with a high photoelectric conversion rate having a semiconductor layer containing very little residual organic substance, composed of semiconductor fine particles having a small crystal diameter, large specific area, and a crystal structure with high photocatalytic activity, and to provide a manufacturing method of the same.

The semiconductor layer 2 composed of semiconductor fine particles is formed by applying and baking a paste of a mixture of semiconductor fine particles of titanium oxide fine particles or the like and a binder composed of polymeric compound on a transparent conductive substrate 1, and then, residual organic substance remaining in the semiconductor layer 2 is removed by irradiating ultraviolet rays on the semiconductor layer 2 and utilizing the photocatalytic activity of the semiconductor fine particles.


Inventors:
ISHIBASHI KENICHI
TOKITA YUICHI
MOROOKA MASAHIRO
SUZUKI YUSUKE
NODA KAZUHIRO
Application Number:
JP2003021410A
Publication Date:
August 19, 2004
Filing Date:
January 30, 2003
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
SONY CORP
International Classes:
B01J35/02; C09C1/36; H01G9/20; H01L31/04; H01M14/00; B01J21/06; (IPC1-7): H01M14/00; B01J21/06; B01J35/02; H01L31/04
Domestic Patent References:
JP2001357896A2001-12-26
JP2002289269A2002-10-04
JP2001247546A2001-09-11
JP2002298646A2002-10-11
JP2001247314A2001-09-11
Attorney, Agent or Firm:
Masatomo Sugiura
Koichi Mori



 
Previous Patent: BATTERY PACK

Next Patent: PLUG-IN CONTACT AND BUS DUCT BRANCHING STRUCTURE