Title:
PHOTOELECTRIC CONVERSION ELEMENT
Document Type and Number:
Japanese Patent JP3441361
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To secure a sufficient incident light intensity to a semiconductor layer and an increase in an optical path length, by a method wherein a charge transfer layer including an ion conductive material is provided between a semiconductor layer holding a coloring matter formed on a first polarity electrode and a second polarity electrode.
SOLUTION: In a substrate 11 whereon the first polarity electrode 12a and the second polarity electrode 12b are formed, the electrode forming surface has excellent insulating property. Since the inner resistance of a photoelectric conversion element is increased when the interval between the first polarity electrode 12a and the second polarity electrode 12b adjacent to each other is large the electrode interval of 20-50 μm is preferable for the formation of a semiconductor layer. In both electrodes 12a and 12b, the optical path length of incident light in a semiconductor layer can be increased without increasing the electrode interval at all if the electrodes in larger aspect ratio are used. In such a constitution, the coloring matter held by an n type semiconductor can be absorbed into a visible light region, thereby enabling electrons to be injected in the semiconductor layer by photoexciting reaction.
Inventors:
Toshiro Hiraoka
Hiroyasu Sumino
Akihiro Horiguchi
Hiroyasu Sumino
Akihiro Horiguchi
Application Number:
JP6715798A
Publication Date:
September 02, 2003
Filing Date:
March 17, 1998
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L51/42; H01G9/20; H01L31/04; (IPC1-7): H01L31/04
Domestic Patent References:
| JP6104463A | ||||
| JP11260427A | ||||
| JP10112337A |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)