Title:
光電変換膜積層型固体撮像装置
Document Type and Number:
Japanese Patent JP4751576
Kind Code:
B2
Abstract:
To achieve high sensitivity in such a manner that photoelectric charges generated by photoelectric conversion films are made to flow into gates of output transistors smoothly to increase a signal voltage relative to signal charges, a solid-state imaging device includes: a semiconductor substrate having signal readout circuits constituted by MOS transistor circuits; photoelectric conversion films stacked on the semiconductor substrate for generating signal charges in accordance with the incident light intensity; connection portions provided on the surface of the semiconductor substrate and connected to wirings leading the signal charges to the surface of the semiconductor substrate; charge paths provided so that the connection portions can be connected to gate portions of output transistors (sources of reset transistors) constituting the signal readout circuits; and potential barrier units provided near the connection portions so as to serve as constant potential barriers relative to charges of the connection portions.
Inventors:
Nobuo Suzuki
Application Number:
JP2004077694A
Publication Date:
August 17, 2011
Filing Date:
March 18, 2004
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
H01L27/146; H01L27/14; H01L27/30; H01L31/10; H04N3/14; H04N5/335; H04N5/369; H04N5/374; H04N5/3745; H04N9/04
Domestic Patent References:
| JP3135175A | ||||
| JP2000083198A | ||||
| JP2002083946A | ||||
| JP2003332551A |
Attorney, Agent or Firm:
Takeshi Takamatsu
Kiyozumi Yazawa
Kiyozumi Yazawa