PURPOSE: To reduce baking and residual image events under low illumination and obtain a good spectral sensitivity characteristic by joining the Sb2S3 area with different Sb concentrations and gradually varying the Sb concentration of a porous layer.

CONSTITUTION: A photoelectric conversion target is comprised with a transparent conductive layer 2 applied and formed on a substrate 1, the first dense layer 3 made of Sb2S3 or Sb2S3 with excessive Sb applied and formed on the transparent conductive layer 2, the second dense layer 4 whose primary component is the Sb2S3 with excessive Sb applied and formed on the first dense layer 3, porous layers 5 and 6 whose primary component is the Sb2S3 formed on the second dense layer 4, and the third dense layer 7 whose primary component is the Sb2S3 with excessive Sb applied and formed on the porous layers 5 and 6. In addition, the Sb concentration of the said porous layers 5 and 6 is gradually or continuously increased as the layers go to the third dense layer 7.