Title:
PHOTOELECTRIC CONVERTING DEVICE
Document Type and Number:
Japanese Patent JPS5615086
Kind Code:
A
Abstract:
PURPOSE:To provide a reverse-current preventing diode and a photo electromotive force generating semiconductor device in the same shape by forming both of them on the same substrate and also by performing their formation in complete simultaneousness using a batch processing. CONSTITUTION:A semiconductor layer 1 is provided by having an ohmic contact for an electrode 3 located on the reverse side. On the side of light-irradiated surface an insulated or semiinsulated layer 6, having an average film thickness of 5-100Angstrom , is provided. Then on the above layer 6, a Schottky type electrode consisted of a semitransparent metal or an MIS type electrode 2 is formed and further a transparent electrode 5 is superpositioned in a multiple structure on the upper surface of said Schottky type electrode or the MIS electrode. The layer 1 is consisted of silicon having a structue of single crystal or nonsingal crystal. The layer 6 is consisted of an insulating film such as silicon oxide, alumina or the like, and its thickness is to be within the limits of an allowable tunnel current.
Inventors:
YAMAZAKI SHIYUNPEI
Application Number:
JP16789979A
Publication Date:
February 13, 1981
Filing Date:
December 24, 1979
Export Citation:
Assignee:
YAMAZAKI SHUNPEI
International Classes:
H01L31/04; H01L31/0443; H01L31/06; H01L31/062; H01L31/07; H01L31/10; (IPC1-7): H01L31/04; H01L31/10