Title:
光電イメージセンサ
Document Type and Number:
Japanese Patent JP4332517
Kind Code:
B2
Abstract:
A photoelectric imaging sensor and method that provide for electronic shuttering and frequency filtering. An exemplary sensor includes a biased conductive frame disposed adjacent to an electron emitting plate that is coupled by way of a reset field effect transistor to ground. A metallized plate is insulated from (capacitively coupled to) the electron emitting plate and is coupled by way of a charge isolation field effect transistor (to ground. Electronic shuttering and frequency filtering in the photoelectric imaging sensor is implemented is as follows. The conductive frame is biased by predetermined amounts to control the surface work function of the electron emitting plate and set the incident light frequency at which photoelectrons are emitted by the electron emitting plate, thus providing for frequency filtering and electronically shuttering of the photoelectric imaging sensor. Electronic shuttering is provided by gating the metallized plate using the charge isolation field effect transistor.
Inventors:
Heather N Bean
Mark N Robbins
Mark N Robbins
Application Number:
JP2005236238A
Publication Date:
September 16, 2009
Filing Date:
August 17, 2005
Export Citation:
Assignee:
Hewlett-Packard Development Company
International Classes:
H01J31/26; H01J40/12; H01L27/146; H04N5/335
Domestic Patent References:
| JP8096705A | ||||
| JP10149761A | ||||
| JP2001195974A |
Attorney, Agent or Firm:
Shoichi Okuyama
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura