Title:
PHOTOELECTRIC SURFACE AND ELECTRON TUBE PROVIDED WITH IT
Document Type and Number:
Japanese Patent JP2006302843
Kind Code:
A
Abstract:
To provide a photoelectric surface with high quantum efficiency, and to provide an electron tube provided with it.
In the photoelectric surface 10, a buffer layer 14, a first GaN layer 16 and a second GaN layer 18 are formed on a substrate 12 in this order. Mg is doped in the second GaN layer 18 and the second GaN layer 18 functions as an active layer. Carrier density in the second GaN layer 18 is 5.0×1017 cm-3 or less. The intensity ratio of Raman intensity of wave number of 144 cm-1 to Raman peak intensity of wave number of 735 cm-1 obtained by performing Raman-spectrometry of the second GaN layer 18 is 0.22 or less.
Inventors:
UCHIYAMA SHOICHI
TAKAGI YASUFUMI
TAKAGI YASUFUMI
Application Number:
JP2005126975A
Publication Date:
November 02, 2006
Filing Date:
April 25, 2005
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
H01J1/34; H01J40/06; H01J43/04
Domestic Patent References:
| JP2001233694A | 2001-08-28 | |||
| JPH1196896A | 1999-04-09 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
Shiro Terasaki
Satoru Ishida