To provide a photoelectric surface provided with a light absorption layer having little crystalline defect, and highly sensitive against visible light and infrared rays of an arbitrary wave length zone, and provide an electron tube using it.

A light absorption layer 11 comprising Be doped (p) type Ga1-xInxNyAs1-y of carrier concentration of 1×1018 cm-3 and of 2 μm thick, an electron carrying layer 12 comprising Be doped (p) type GaAs of carrier concentration of 1×1019 cm-3 and of 0.5 μm thick, and an extremely thin surface layer 13 comprising Cs2O for decreasing the work function of the surface are successively formed on a semiconductor substrate 10 comprising semi-insulative GaAs. By selecting the combination of (x) and (y) so that the composition of the Ga1-xInxNyAs1-y constituting the light absorption layer 11 is respectively lattice matched with the semiconductor substrate 10 and the electron carrying layer 12 and the lattice matching condition of 0.41x-1.14y=0 is satisfied, a lattice constant deviation can be adjusted so as to be within 1%.