Title:
PHOTOELECTRIC SURFACE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3806514
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a photoelectric surface having sensitivity to the short wavelength component of ultraviolet rays and also provide its manufacturing method.
SOLUTION: This manufacturing method carries out epitaxial growth of crystal to a light absorbing layer 12 and a thermal expansion buffer layer 15 formed of group III nitride InxAlyGa1-x-yN (0≤x≤1, 0≤y≤1, 0≤x+y≤1) having sensitivity to ultraviolet rays by using a substrate such as LGO or LAO having good lattice matching with the group III nitride as a growth substrate, sticks the thermal expansion buffer layer 15 to a supporting board 11 having transmittance to light in a required wavelength region such as a short wavelength component of ultraviolet rays, and thereafter, removes the growth substrate, can thereby form a light absorbing layer in a good crystalline state having few lattice defects, and can realize various photoelectric surfaces such as photoelectric surface having high sensitivity to ultraviolet rays.
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Inventors:
Hirofumi Suga
Shoichi Uchiyama
Minoru Arakaki
Tokuaki Futahashi
Shoichi Uchiyama
Minoru Arakaki
Tokuaki Futahashi
Application Number:
JP17459398A
Publication Date:
August 09, 2006
Filing Date:
June 22, 1998
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J1/34; H01J9/12; H01J1/78; H01J9/233; H01J29/38; H01J31/50; H01J40/06; (IPC1-7): H01J1/34; H01J1/78; H01J9/12; H01J9/233; H01J29/38; H01J31/50; H01J40/06
Domestic Patent References:
JP5885244A | ||||
JP371528A | ||||
JP4303535A | ||||
JP9213203A | ||||
JP10188779A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Tatsuya Shioda
Shiro Terasaki
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