To provide a higher sensitive photoelectric surface capable of changing the short wavelength limit and a photoelectric transfer tube using the photoelectric surface.

A window layer 31 consisting of Inx(AlyGa1-y)1-x'As is closely provided through an antireflection film 20 on a glass face late (10). An active layer 32 consisting of InxGa1-xAs having lattice match to the window layer 31 is formed with a range of 0<x'=x<0.18, 0<y<1 on the window layer 31. A surface layer 33 consisting of Cs2O and an electrode 50 consisting of Cr are formed on the upper surface of the active layer 32 at its central part, and the upper surface of the active layer 32 at its end, respectively. This constitution changes the short wavelength limit with the lattice match applied to the window layer 31 and the active layer 32.