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Title:
PHOTOELECTRIC TRANSDUCER, ITS MANUFACTURING METHOD AND POROUS TITANIUM OXIDE SEMICONDUCTOR ELECTRODE
Document Type and Number:
Japanese Patent JP2001196104
Kind Code:
A
Abstract:

To provide a photoelectric transducer of higher photoelectric conversion efficiency and its manufacturing method compared with that of a traditional photoelectric transducer, and provide a porous titanium oxide semiconductor electrode.

1. The photoelectric transducer is composed of the porous titanium oxide semiconductor electrode, a pigment which is adsorbed on the surface of the electrode, an electrolyte 5 having a redox pair and a counter electrode 6. The titanium oxide constituting porous titanium oxide semiconductor electrode 3 is a mixture of at least two kinds particles having different average primary particle sizes. 2. This is a manufacturing method of photoelectric transducer in which an application solution is prepared by mixing at least two kinds of particles having different average primary particle sizes so that the distribution of primary particle size of titanium oxide constituting porous titanium oxide semiconductor electrode has two local maximums, and after the coating solution is coated on the base board, it is baked and the porous titanium oxide thin film is prepared. 3. This is the porous titanium oxide semiconductor electrode for the photoelectric transducer constituted by including the mixture of two kinds of particles having different average primary particle sizes.


Inventors:
YANAGISAWA MASAHIRO
Application Number:
JP2000001950A
Publication Date:
July 19, 2001
Filing Date:
January 07, 2000
Export Citation:
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Assignee:
RICOH KK
International Classes:
H01L31/04; H01G9/20; H01M14/00; (IPC1-7): H01M14/00; H01L31/04
Attorney, Agent or Firm:
Eiji Tomomatsu (1 person outside)