To exclude unwanted infrared light and to improve reliability of a photoelectric transducer.

The photo electric transducer comprises a semiconductor substrate 30 with a photoelectric transducer element formed on its surface, a visible light filter 34 provided to cover at least a part of the surface of the semiconductor substrate 30, and an upper supporting substrate 42 adhered on the surface of the semiconductor substrate 30. The upper supporting substrate 42 has a resin layer 42b absorbing infrared light and adhering a plurality of substrates 42a to constitute the photoelectric transducer capable of the pending problem.