PHOTOELECTRIC TRANSDUCER

Japanese Patent JPS62262470

A

PURPOSE:To realize a blocking layer capable of effective formation of a junction by a method wherein, between a photoelectric conversion part and a part that takes out electric signals, a plurality of layers of different materials are laid for the formation of conductive bands or valence bands or both discontinued from each other. CONSTITUTION:After the construction of a light-transmitting electrode on a glass-surface substrate, in a plasma CVD unit, a compound of hydrogen- containing amorphous silicon and nitrogen is deposited, and then a hydrogen- containing phosphorous-doped amorphous silicon 22 is deposited. The rate of silicon to nitride in the first layer is 4:1, and two silicon nitride layers and two amorphous silicon layer are alternately placed one upon the other. Further, a silicon nitride layer is deposited for the formation of a positive-hole blocking layer 8. Next, an amorphous silicon photoconductive layer 24 is deposited, and amorphous silicon carbide 25 and boron-amorphous silicon 26 are deposited alternately for the formation of an electron blocking layer 9.

JPH021520	OPTICAL SENSOR DEVICE
JPWO2014021177	Semiconductor devices, semiconductor device manufacturing methods, solid-state image sensors, and electronic devices
JPH03102834	SEMICONDUCTOR DEVICE AND PHOTOELECTRIC CONVERTER USING SAME

ISHIOKA YOSHIO
SHIMOMOTO TAIJI
TAKASAKI YUKIO
TSUJI KAZUTAKA
HIRAI TADAAKI
MATSUBARA HIROKAZU
MAKISHIMA TATSUO

JP10464586A

November 14, 1987

May 09, 1986

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HITACHI LTD

H01L31/10; G01J1/02; H01L31/08; H04N5/335; H04N5/357; (IPC1-7): G01J1/02; H01L31/08; H04N5/335

Katsuo Ogawa

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