To reduce a sensitivity degradation due to the reflection by a silicon oxide film in contact with the silicon surface of a photodiode in the conventional photoelectric transducing apparatus, and to reduce the increasing ratio of 1/f noise to the whole random noise, which has an output being directly proportional to 1/f with respect to a driving frequency f that occurs in a source follower MOS transistor 6 as pixels become finer.
The photoelectric transducing apparatus which has pixels arranged in an array, including: a light receiving region for transducing light into signal charges; an insulating film formed on the light receiving region; and an amplifying transistor for amplifying the signal charges to output, is provided with an anti-reflection film having higher reflective index than that of the insulating film, the film thicknesses of the insulating film and the gate insulating film of the transistor being adapted to differ each other.
INOUE SHUNSUKE
ITANO TETSUYA
Yuichi Uchio