Title:
PHOTOELECTRIC TRANSDUCING APPARATUS AND MANUFACTURING METHOD OF PHOTOELECTRIC TRANSDUCING APPARATUS, AND CAMERA USING THE SAME
Document Type and Number:
Japanese Patent JP3840214
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce a sensitivity degradation due to the reflection by a silicon oxide film in contact with the silicon surface of a photodiode in the conventional photoelectric transducing apparatus, and to reduce the increasing ratio of 1/f noise to the whole random noise, which has an output being directly proportional to 1/f with respect to a driving frequency f that occurs in a source follower MOS transistor 6 as pixels become finer.
SOLUTION: The photoelectric transducing apparatus which has pixels arranged in an array, including: a light receiving region for transducing light into signal charges; an insulating film formed on the light receiving region; and an amplifying transistor for amplifying the signal charges to output, is provided with an anti-reflection film having higher reflective index than that of the insulating film, the film thicknesses of the insulating film and the gate insulating film of the transistor being adapted to differ each other.
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Inventors:
Hiroshi Yasuhara
Shunsuke Inoue
Tetsuya Itano
Shunsuke Inoue
Tetsuya Itano
Application Number:
JP2003319911A
Publication Date:
November 01, 2006
Filing Date:
September 11, 2003
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L27/146; H01J40/14; H01L27/14; H01L31/00; H04N5/335; H04N5/357; H04N5/369; H04N5/374; H04N101/00; (IPC1-7): H01L27/146; H01L27/14; H04N5/335; //H04N101:00
Domestic Patent References:
| JP2001111022A | ||||
| JP2002083949A | ||||
| JP63044761A | ||||
| JP2000012822A | ||||
| JP2001291857A | ||||
| JP11233750A |
Attorney, Agent or Firm:
Keizo Nishiyama
Yuichi Uchio
Yuichi Uchio