PURPOSE: To provide a photoelectric transfer device capable of forming PN injection with ease without adopting a sophisticated process, such as ion- implantation, and forming a light receiving region by means of a simple process with regards to a photovolatic type photoelectric transfer device.
CONSTITUTION: A semiconductor substrate 11 is provided with a reverse conduction type semiconductor layer which is reverse to the semiconductor substrate 11 and an insulation film 13 which are all laminated on the board. A grid electrode 14 is also installed on the insulation film 13. Voltage is applied between the grid electrode 14 and the reverse conduction type semiconductor layer 12 while a reverse layer 15 are selectively installed in the reverse conduction type semiconductor layer 12 under the grid electrode 14. A PN junction is installed in the reverse conduction type semiconductor layer which isolates the reverse layer 15 as a channel stopper.
KAJIWARA NOBUYUKI
SUDO HAJIME
FUJIWARA KOJI
