PURPOSE: To enable trusty transfer of an extremely fine pattern by a method wherein IV, III-V, II-VI semiconductors having small work functions are used for the photoelectric material of a photoelectric mask, and moreover the semiconductors thereof are used as crystal layers.
CONSTITUTION: Thin film 2 of high meltng point metal such as tungsten, tantalum, molybdenum, etc., or silicide thereof are formed in pattern type on the crystal layer 1 of IV semiconductor such as silicon, etc., II-V semiconductor such as gallium arsenide, gallium arsenic phosphide, gallium phosphide, etc., or II-IV semiconductor such as cadmium telluride, zinc cadmium telluride, zinc selenium telluride, etc., containing impurities in the range of concentration of 1×1018∼1×1020/cc to obtain a photoelectric mask 3. Because the photoelectric mask layer 1 using the IV, III-V or II-VI semiconductor crystal as the photoelectric material constructs the photoelectric mask 3 of uniform and flat surface on the whole surface, accuracy of transfer of the pattern is enhanced.
SAKAMOTO JUICHI
KUDO JINKO
YASUDA HIROSHI
