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Patent Searching and Data


Title:
PHOTOELECTRON EMISSION PLANE
Document Type and Number:
Japanese Patent JPH05282991
Kind Code:
A
Abstract:

PURPOSE: To realize a sensitive photoelectron emission plane having a simple structure by producing electron holes by incident light and emitting electrons into the external vacuum atmosphere.

CONSTITUTION: When light is applied on the boundary between an internal anode 21 and a semiconductor 11 from the outside, electron holes are excited within the internal anode 21. The hot electron holes pass through a barrier to be implanted into the semiconductor 11. Electrons are implanted thereinto from an internal cathode 22. An electric field is applied to the semiconductor 11 by electrodes 21, 22 provided on both surfaces thereof and a power supply 43, and the implanted electrons are transferred to the internal anode 21, the part of which is emitted into a vacuum atmosphere to be caught by an external anode 23.


Inventors:
Mizuhiko Yoshihiko
Toru Hirohata
Tomoko Suzuki
Tsuneo Weihara
Aragaki Minoru
Application Number:
JP7431092A
Publication Date:
October 29, 1993
Filing Date:
March 30, 1992
Export Citation:
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Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J1/34; H01J40/06; (IPC1-7): H01J1/34; H01J40/06
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)