PHOTOMASK AND FORMATION OF RESIST PATTERN

Japanese Patent JP3400525

B2

PURPOSE: To obtain a method for selectively forming fine holes and groove patterns by pattern deformation which is caused by thermal flow of a resist without changing the design of a photomask for pattern transfer by forming a translucent film at the peripheries of transparent patterns corresponding to the patterns desired to be reduced.
CONSTITUTION: This photomask is composed of a glass substrate 1, a light shielding film 2 and the translucent film 3. Formation of the mask is executed by using two times of lithography, working patterns of the transparent parts 6, 7 in the first time and working the translucent parts in the second time. In such a case, the control of translucency is executed by controlling the etching depth of the light shielding film 2. The peripheries of the transparent patterns on the photomask for pattern transfer corresponding to the patterns desired to be reduced are formed translucent in such a manner. The dissolution suppressing agent in the resist on the peripheries of the patterns are then partly decomposed by the light transmitted through the translucent film 3. As a result, the softening point temp. is made lower than the softening point temp. of the unexposed resist and the viscosity of the resist is lowered and, therefore, the thermal flow is liable to be generated. The selective reduction of the desired patterns is effected by adding a heat treatment thereto.

Katsuya Hayano
Norio Hasegawa

JP4352594A

April 28, 2003

March 15, 1994

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株式会社日立製作所
株式会社日立超エル・エス・アイ・システムズ

G03F1/32; G03F1/70; G03F1/80; G03F7/40; G03F9/00; H01L21/027; H01L21/302; H01L21/3065; (IPC1-7): G03F1/08; G03F9/00; H01L21/027

JP4143765A
JP1258419A
JP59232418A

Yasuo Sakuta (1 outside)

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