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Patent Searching and Data


Title:
PHOTOMASK PRODUCING METHOD AND PHOTOMASK BLANK
Document Type and Number:
Japanese Patent JP2009080510
Kind Code:
A
Abstract:

To provide a technique for suppressing a loading effect relating to the production of a photomask (10) that poses a problem of reduction in CD (critical dimension) accuracy due to the loading effect.

A method of producing a halftone phase photomask (10) having a light-transmissive substrate (1) and a light-semitransmissive phase shift pattern (51) having a global opening ratio difference in its plane on the light-transmissive substrate (1) is characterized by using, as an etching mask for a chromium film (2), an etching mask pattern (31) made of an inorganic-based material having resistance against etching of the chromium film (2). The method includes steps of applying dry etching to the chromium film (2) by using the etching mask pattern (31) as a mask to form a chromium pattern (21), and applying dry etching to the a light-semitransmissive phase shift film (5) by using the chromium pattern (21) as a mask to form the light-semitrasmissive phase shift pattern (51), and removing a desired part or the whole of the chromium pattern (21).


Inventors:
Okubo, Yasushi
Hara, Mutsumi
Application Number:
JP2009000008429
Publication Date:
April 16, 2009
Filing Date:
January 19, 2009
Export Citation:
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Assignee:
HOYA CORP
International Classes:
G03C5/00; G03F1/32; G03F1/34; G03F1/68; G03F1/80; G03F9/00; H01L21/027; H01L21/3065
Domestic Patent References:
JPH0749558A1995-02-21
JP2000181049A2000-06-30
Foreign References:
US6472107B12002-10-29
Attorney, Agent or Firm:
池田 憲保
福田 修一