Title:
PHOTONIC CRYSTAL SLAB ELECTROMAGNETIC WAVE ABSORBER, HIGH FREQUENCY METAL WIRING CIRCUIT, ELECTRONIC COMPONENT, TRANSMITTER, RECEIVER, AND PROXIMITY RADIO COMMUNICATION SYSTEM
Document Type and Number:
Japanese Patent JP2014197838
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a photonic crystal slab electromagnetic wave absorber of a thin flat surface type, easy to be processed, having high capturing and absorbing effect, a high frequency metal wiring circuit to which the photonic crystal slab electromagnetic wave absorber is applied, an electronic component, a transmitter, a receiver, and a proximity radio communication system.SOLUTION: A photonic crystal slab electromagnetic wave absorber 1 includes: a two-dimensional photonic crystal slab 12 composed of a semiconductor material; and lattice points 12A for forming a resonance state that are periodically disposed in the two-dimensional photonic crystal slab and are capable of capturing an electromagnetic wave incident from an outside by resonating an electromagnetic wave at a band end of a photonic band structure of the two-dimensional photonic crystal slab within a plane of the two-dimensional photonic crystal slab. The two-dimensional photonic crystal slab is doped with impurities and is capable of absorbing the captured electromagnetic wave at a resonance frequency of the band end of the two-dimensional photonic crystal slab.
Inventors:
FUJITA MASAYUKI
NAGATSUMA TADAO
KAKIMI RYOMA
ONISHI MASARU
MIYAI EIJI
NAGATSUMA TADAO
KAKIMI RYOMA
ONISHI MASARU
MIYAI EIJI
Application Number:
JP2014028821A
Publication Date:
October 16, 2014
Filing Date:
February 18, 2014
Export Citation:
Assignee:
UNIV OSAKA
ROHM CO LTD
ROHM CO LTD
International Classes:
H01Q17/00; G02B1/02; H01Q15/14; H05K9/00
Domestic Patent References:
| JP2011014723A | 2011-01-20 | |||
| JP2004228257A | 2004-08-12 | |||
| JP2001210756A | 2001-08-03 | |||
| JP2008311960A | 2008-12-25 |
Foreign References:
| US20070222658A1 | 2007-09-27 | |||
| WO2011083693A1 | 2011-07-14 |
Other References:
MINGBO PU, ET AL.: "Engineering heavily doped silicon for broadband absorber in the terahertz regime", OPTICS EXPRESS, vol. 20, no. 23, JPN7017002670, 5 November 2012 (2012-11-05), US, pages 25513 - 25519, ISSN: 0003621716
Attorney, Agent or Firm:
Hidekazu Miyoshi
Keishin Terayama
Miyoshi Hiroyuki
Keishin Terayama
Miyoshi Hiroyuki