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Title:
PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3875474
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To obtain a photoresist composition which prevents the formation of a pattern inclined by an acid in the upper part of a photoresist and the increase of I/D bias.
SOLUTION: The photoresist composition contains a photoresist resin, a photo-acid generating agent, a photo-base generating agent and an organic solvent. The photo-base generating agent is preferably selected from a compound of formula 1 and a compound of formula 2.


Inventors:
Chung Zhao Chang
Root root Kei
Kim Hidehide
White base ho
Application Number:
JP2000287440A
Publication Date:
January 31, 2007
Filing Date:
September 21, 2000
Export Citation:
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Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G03F7/039; C08F222/06; C08K5/02; C08K5/29; C08K5/32; C08K5/41; C08L35/00; C08L101/00; G03F7/00; G03F7/004; G03F7/38; H01L21/027; H01L21/312; (IPC1-7): G03F7/039; C08F222/06; C08K5/02; C08K5/29; C08K5/32; C08K5/41; C08L35/00; C08L101/00; G03F7/004; G03F7/38; H01L21/027
Domestic Patent References:
JP10083079A
JP9281699A
JP2296250A
JP6194834A
JP5197148A
JP11024247A
JP11295895A
JP2000010270A
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune