Title:
PHOTORESIST MATERIAL AND PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JP3739227
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a photoresist material excellent in the stability of sensitivity to long-term preservation and a variation of ambient temperature by incorporating an α,β-unsaturated ketone compound.
SOLUTION: The photoresist material contains at least an α,β-unsaturated ketone compound. This ketone compound may be represented by the formula, wherein R1 and R2 are each 1-10C linear alkyl, 3-10C branched or cyclic alkyl or 6-14C aryl. The photoresist material is particularly profitable when used as a chemical amplification type one exposed with high energy lines, X-rays or electron beams having such a short wavelength as ≤500 nm. The photoresist material is applied on a substrate, heat-treated, exposed with high energy lines, X-rays or electron beams having ≤500 nm wavelength through a photomask and developed with a developer to form the objective pattern.
Inventors:
Tatsushi Kaneko
Kenji Koizumi
Satoshi Watanabe
Yoshitaka Yanagi
Kenji Koizumi
Satoshi Watanabe
Yoshitaka Yanagi
Application Number:
JP5694499A
Publication Date:
January 25, 2006
Filing Date:
March 04, 1999
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/004; G03F7/038; H01L21/027; G03F7/039; (IPC1-7): G03F7/004; G03F7/038; G03F7/039; H01L21/027
Domestic Patent References:
| JP45022085B1 | ||||
| JP9297401A | ||||
| JP9244235A | ||||
| JP9304931A | ||||
| JP10048834A | ||||
| JP5061193A | ||||
| JP11030865A | ||||
| JP9090627A | ||||
| JP11044949A | ||||
| JP10020489A |
Attorney, Agent or Firm:
Mikio Yoshimiya
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