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Title:
PHOTORESIST MONOMER, PHOTORESIST COPOLYMER, PRODUCTION OF PHOTORESIST COPOLYMER, PHOTORESIST COMPOSITION, FORMATION OF PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2000086725
Kind Code:
A
Abstract:

To obtain the subject new compound comprising a specific photoresist monomer, suitable for a photoresist having excellent etching resistance and adhesiveness and high sensitivity.

This compound is shown by the formula [R1 and R2 are each COOH or an R-COOH (R is a 1-10C alkyl)] such as 5-norbornene-2,3-dicarboxylic acid)]. The compound of the formula is obtained, for example, by thermally decomposing dicyclopentadiene to give cyclopentadiene, dissolving cyclopentadiene in an organic solvent, cooling and reacting the solution with maleic anhydride while gradually adding maleic anhydride. The reaction is further carried out while gradually raising the temperature to a normal temperature. After the reaction is finished, the organic solvent is removed by a rotary evaporator to give 5-norbornene-2,3-dicarboxylic anhydride by a vacuum distillation method. Then the compound is added to an aqueous solution of NaOH in a reactor and dissolved by stirring. Then the temperature is raised, the solution is refluxed and the temperature is raised to a normal temperature. An aqueous solution of sulfuric acid is dripped into the reaction solution and the objective compound is separated and extracted.


Inventors:
JUNG MIN HO
JUNG JAE CHANG
LEE GEUN SU
BAIK KI HO
Application Number:
JP21284099A
Publication Date:
March 28, 2000
Filing Date:
July 27, 1999
Export Citation:
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Assignee:
HYUNDAI ELECTRONICS IND
International Classes:
C07C61/29; C07C69/608; C08F20/20; C08F22/06; C08F32/00; C08F220/20; C08F222/06; C08F232/00; C08F232/08; G03F7/004; G03F7/038; G03F7/039; (IPC1-7): C08F32/00; C07C61/29; C08F20/20; C08F22/06; G03F7/004; G03F7/039
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)